US 11,658,060 B2
SiC material and method for manufacturing same
Sang Chul Lee, Gyeonggi-do (KR)
Assigned to TOKAI CARBON KOREA CO., LTD, Gyeonggi-Do (KR)
Appl. No. 17/604,533
Filed by TOKAI CARBON KOREA CO., LTD, Gyeonggi-do (KR)
PCT Filed Mar. 25, 2020, PCT No. PCT/KR2020/004075
§ 371(c)(1), (2) Date Oct. 18, 2021,
PCT Pub. No. WO2020/213847, PCT Pub. Date Oct. 22, 2020.
Claims priority of application No. 10-2019-0045602 (KR), filed on Apr. 18, 2019.
Prior Publication US 2022/0148907 A1, May 12, 2022
Int. Cl. C23C 16/32 (2006.01); H01L 21/687 (2006.01); B01J 20/32 (2006.01); B82B 3/00 (2006.01); H01J 37/32 (2006.01); C23C 16/44 (2006.01); H01L 21/02 (2006.01); C30B 23/06 (2006.01); C30B 29/36 (2006.01); H01L 21/324 (2006.01)
CPC H01L 21/68757 (2013.01) [B01J 20/3202 (2013.01); B82B 3/0033 (2013.01); C23C 16/325 (2013.01); C23C 16/44 (2013.01); C30B 23/06 (2013.01); C30B 29/36 (2013.01); H01J 37/32724 (2013.01); H01L 21/02167 (2013.01); H01L 21/02529 (2013.01); H01L 21/324 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A SiC material comprising a SiC layer including a low thermal conductivity region which has an average crystal grain size of 3.5 μm or less, and is a (111) plane preferential growth in X-ray diffraction analysis,
wherein the low thermal conductivity region has a (111) plane, a (200) plane, a (220) plane, and a (311) plane in X-ray diffraction analysis,
wherein the SiC layer has a thickness of 2 mm or more,
wherein the low thermal conductivity region has a thermal conductivity of 200 W/m·k or less, and
wherein the low thermal conductivity region has a diffraction intensity ratio (I) of the X-ray diffraction analysis calculated according to Equation 1 below of 0.5 or less;

OG Complex Work Unit Math