US 11,658,052 B2
Chip transferring method and the apparatus thereof
Min-Hsun Hsieh, Hsinchu (TW); De-Shan Kuo, Hsinchu (TW); Chang-Lin Lee, Hsinchu (TW); and Jhih-Yong Yang, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Jul. 2, 2021, as Appl. No. 17/367,067.
Application 17/367,067 is a continuation of application No. 16/257,886, filed on Jan. 25, 2019, granted, now 11,056,368.
Claims priority of application No. 107102652 (TW), filed on Jan. 25, 2018.
Prior Publication US 2021/0335641 A1, Oct. 28, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/677 (2006.01); H01L 33/00 (2010.01); H01L 21/683 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/67721 (2013.01) [H01L 21/6773 (2013.01); H01L 21/67144 (2013.01); H01L 21/67288 (2013.01); H01L 21/6836 (2013.01); H01L 33/0075 (2013.01); H01L 2221/68322 (2013.01); H01L 2221/68354 (2013.01); H01L 2221/68368 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A chip transferring method, comprising
providing a plurality of chips on a first load-bearing structure;
measuring a photoelectric characteristic value of each of the plurality of chips;
categorizing the plurality of chips into a first portion chips and a second portion chips according to the photoelectric characteristic value of each of the plurality of chips, wherein each of the first portion chips respectively comprises a first photoelectric characteristic value which falls within a defined photoelectric characteristic value range, and each of the second portion chips respectively comprises a second photoelectric characteristic value which does not fall within the defined photoelectric characteristic value range;
providing a second load-bearing structure;
weakening a first adhesion between the first portion chips and the first load-bearing structure or between the second portion chips and the first load-bearing structure; and
transferring the first portion chips after weakening the first adhesion between the first portion chips and the first load-bearing structure or transferring the second portion chips after weakening the first adhesion between the second portion chips and the first load-bearing structure to the second load-bearing structure,
wherein the defined photoelectric characteristic value range is divided into a plurality of sub-ranges.