US 11,658,041 B2
Methods of modifying portions of layer stacks
Suketu Arun Parikh, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jan. 25, 2021, as Appl. No. 17/157,546.
Claims priority of provisional application 63/031,315, filed on May 28, 2020.
Prior Publication US 2021/0375636 A1, Dec. 2, 2021
Int. Cl. H01L 21/321 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01)
CPC H01L 21/3212 (2013.01) [H01L 21/02183 (2013.01); H01L 21/32139 (2013.01); H01L 21/762 (2013.01); H01L 23/00 (2013.01); H01L 23/5226 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of forming a modified deep trench in a layer stack, comprising:
selectively depositing a patterned hard mask over at least a portion of a layer stack;
selectively etching a deep trench disposed in the layer stack to form the modified deep trench, such that at least a portion of a deep metal contact is exposed, wherein the selective etching comprises etching portions of the layer stack that are exposed through the patterned hard mask;
depositing a barrier layer in the modified deep trench, wherein the barrier layer is not deposited on the exposed portion of the deep metal contact;
depositing a first filler material over the barrier layer; and
removing first undesired portions of the first filler material.