US 11,658,039 B2
Plasma etching apparatus, plasma etching method, and semiconductor device fabrication method including the plasma etching method
Kyuho Kim, Hwaseong-si (KR); Nam Kyun Kim, Seoul (KR); Sungjun Ann, Seoul (KR); Myungsun Choi, Hwaseong-si (KR); Dougyong Sung, Seoul (KR); and Seungbo Shim, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 8, 2021, as Appl. No. 17/370,705.
Claims priority of application No. 10-2020-0088411 (KR), filed on Jul. 16, 2020.
Prior Publication US 2022/0020597 A1, Jan. 20, 2022
Int. Cl. H01L 21/311 (2006.01); H01L 21/683 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/31116 (2013.01) [H01J 37/3244 (2013.01); H01J 37/32146 (2013.01); H01J 37/32165 (2013.01); H01L 21/6833 (2013.01); H01J 2237/3347 (2013.01)] 10 Claims
OG exemplary drawing
1. A plasma etching method, comprising:
providing a plasma etching chamber having a gas supply, an electrostatic chuck having thereon a sample to be etched, a radio frequency source inducing a plasma on the sample, and a controller;
providing a gas from the gas supply to the etching chamber;
providing the electrostatic chuck with a first radio-frequency power having a first frequency;
providing the electrostatic chuck with a second radio-frequency power having a second frequency, the second radio-frequency power being greater than the first radio-frequency power, and the second frequency being less than the first frequency; and
providing the electrostatic chuck with a third radio-frequency power having a third frequency, the third radio-frequency power being less than the second radio-frequency power, and the third frequency being less than the second frequency,
wherein the second radio-frequency power is from 3 times to 5 times the first radio-frequency power.