US 11,658,038 B2
Method for dry etching silicon carbide films for resist underlayer applications
Angelique Raley, Albany, NY (US); Christopher Cole, Albany, NY (US); and Qiaowei Lou, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on May 11, 2021, as Appl. No. 17/317,587.
Claims priority of provisional application 63/024,273, filed on May 13, 2020.
Prior Publication US 2021/0358763 A1, Nov. 18, 2021
Int. Cl. H01L 21/311 (2006.01); H01L 21/033 (2006.01)
CPC H01L 21/31116 (2013.01) [H01L 21/0332 (2013.01); H01L 21/31144 (2013.01); H01L 21/31138 (2013.01)] 20 Claims
OG exemplary drawing
1. A substrate processing method, comprising:
providing a substrate containing a silicon carbide film thereon, and a photoresist layer defining a pattern over the silicon carbide film;
plasma-exciting an etching gas containing a fluorocarbon-containing gas and an oxygen-containing gas; and
exposing the substrate to the plasma-excited etching gas to transfer the pattern to the silicon carbide film, wherein at least a portion of a thickness of the photoresist layer survives the exposing, and wherein the exposing includes performing a pulsed gas etching process, comprising:
a) exposing the substrate to the plasma-excited etching gas, and
b) exposing the substrate to a plasma-excited noble gas, wherein steps a) and b) are sequentially performed at least once.