US 11,658,035 B2
Substrate processing method
SeungHyun Lee, Tama (JP); Hyunchul Kim, Hwaseong-si (KR); SeungWoo Choi, Hwaseong-si (KR); and YeaHyun Gu, Hwaseong-si (KR)
Assigned to ASM IP Holding B.V., Versterkerstraat (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jun. 25, 2021, as Appl. No. 17/358,860.
Claims priority of provisional application 63/046,511, filed on Jun. 30, 2020.
Prior Publication US 2021/0407813 A1, Dec. 30, 2021
Int. Cl. H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01J 37/305 (2006.01)
CPC H01L 21/3065 (2013.01) [H01J 37/3053 (2013.01); H01L 21/308 (2013.01)] 22 Claims
OG exemplary drawing
1. A substrate processing method comprising:
supplying a first gas onto a structure;
supplying a second gas to form a first thin film on the structure;
forming a second material layer by supplying the first gas on the first thin film;
removing a portion of the second material layer to expose a portion of the first thin film;
removing the exposed portion of the first thin film;
removing the second material layer; and
trimming the first thin film,
wherein the step of trimming the first thin film occurs after the step of removing the second material layer, and
wherein the step of trimming comprises:
contacting the first thin film with a low frequency Ar plasma,
a sputtering process, or
annealing the first thin film.