US 11,658,031 B2
Implantation mask formation
Wei-Chao Chiu, Hsinchu (TW); Yong-Jin Liou, Hsinchu (TW); Yu-Wen Chen, Hsinchu (TW); Chun-Wei Chang, Tainan (TW); Ching-Sen Kuo, Taipei (TW); and Feng-Jia Shiu, Jhudong Township (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 1, 2021, as Appl. No. 17/303,522.
Claims priority of provisional application 63/200,388, filed on Mar. 4, 2021.
Prior Publication US 2022/0285155 A1, Sep. 8, 2022
Int. Cl. H01L 21/04 (2006.01); H01L 27/146 (2006.01); H01L 21/033 (2006.01); H01L 21/266 (2006.01)
CPC H01L 21/0332 (2013.01) [H01L 21/0465 (2013.01); H01L 21/266 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a pattern in a photoresist layer over a substrate,
wherein the pattern includes a plurality of trenches through the photoresist layer;
performing a resist hardening operation on the photoresist layer to cause a hardening layer to form on a top surface of the photoresist layer and on sidewalls of the plurality of trenches; and
performing, after performing the resist hardening operation, an ion implantation operation to form one or more isolation wells in the substrate using the pattern as an implantation mask.