US 11,658,030 B2
Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
Tom Blomberg, Vantaa (FI); and Chiyu Zhu, Helsinki (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Dec. 13, 2019, as Appl. No. 16/713,311.
Application 16/713,311 is a continuation of application No. 15/917,262, filed on Mar. 9, 2018, granted, now 10,529,563.
Claims priority of provisional application 62/478,471, filed on Mar. 29, 2017.
Prior Publication US 2020/0118817 A1, Apr. 16, 2020
Int. Cl. H01L 21/02 (2006.01); H01L 21/28 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01)
CPC H01L 21/02565 (2013.01) [C23C 16/401 (2013.01); C23C 16/407 (2013.01); C23C 16/45523 (2013.01); C23C 16/45527 (2013.01); H01L 21/0228 (2013.01); H01L 21/0257 (2013.01); H01L 21/0262 (2013.01); H01L 21/28194 (2013.01); H01L 21/02592 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for forming a doped metal oxide film on a substrate, comprising:
contacting a substrate with a first reactant comprising a metal halide source;
purging the first reactant and first reaction byproducts;
after purging the first reactant and first reaction byproducts, contacting the substrate with a second reactant comprising a hydrogenated source, wherein the hydrogenated source is selected from the group consisting of a silane, having a formula SixH(2x+2) or a cyclic silane, and a germane, having a formula GexH(2x+2) or a cyclic germane, wherein the hydrogenated source is a dopant precursor for the doped metal oxide film;
purging the second reactant and second reaction byproducts;
after purging the second reactant and second reaction byproducts, contacting the substrate with the first reactant for a second time;
purging the first reactant and first reaction byproducts for a second time; and
after purging the first reactant and first reaction byproducts for a second time, contacting the substrate with a third reactant comprising an oxide source,
wherein the doped metal oxide film comprises a structure depending on the order of the contacting the substrate with the first reactant, the contacting the substrate with the second reactant, and the contacting the substrate with the third reactant.