US 11,658,029 B2
Method of forming a device structure using selective deposition of gallium nitride and system for same
Sourish Banerjee, Enschede (NL); Antonius Aarnink, Enschede (NL); and Alexey Kovalgin, Enschede (NL)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL); UNIVERSITY TWENTE, Enschede (NL); and NEDERLANDSE ORGANISATIE VOOR WETENSCHAPPELIJK ONDERZOEK, Gravenhage (NL)
Filed on Dec. 12, 2019, as Appl. No. 16/712,707.
Claims priority of provisional application 62/779,684, filed on Dec. 14, 2018.
Prior Publication US 2020/0194253 A1, Jun. 18, 2020
Int. Cl. H01L 21/02 (2006.01); H01L 21/306 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); C23C 16/30 (2006.01)
CPC H01L 21/0254 (2013.01) [C23C 16/303 (2013.01); C23C 16/45527 (2013.01); C23C 16/56 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02636 (2013.01); H01L 21/30612 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A method of forming a device structure, the method comprising the steps of:
providing a substrate, comprising a surface, within a reaction chamber, the surface comprising a first portion comprising one or more of aluminum nitride and gallium nitride and a second portion comprising another material;
exposing the first portion to a reducing agent to provide NHx termination on the first portion; and
after the step of exposing, using a thermal cyclic deposition process, selectively depositing gallium nitride on the first portion relative to the second portion.