US 11,658,028 B2
Film forming method and film forming apparatus
Rui Kanemura, Nirasaki (JP); and Hiroyuki Hayashi, Nirasaki (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Aug. 13, 2019, as Appl. No. 16/539,157.
Claims priority of application No. JP2018-153701 (JP), filed on Aug. 17, 2018.
Prior Publication US 2020/0058499 A1, Feb. 20, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01); C23C 16/24 (2006.01); C23C 16/56 (2006.01); C23C 16/52 (2006.01)
CPC H01L 21/02532 (2013.01) [C23C 16/24 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01L 21/0262 (2013.01); H01L 21/02592 (2013.01); H01L 21/02664 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A film forming method for forming a silicon film on a substrate having a recess in a surface of the substrate, the film forming method comprising:
performing a cycle a set number of times, the cycle including:
forming the silicon film such that a second film thickness is thicker than a first film thickness by supplying a silicon-containing gas to the substrate, wherein the first film thickness is a thickness of the silicon film at a lower portion of a side wall of the recess and the second film thickness is a thickness of the silicon film at an upper portion of the side wall of the recess; and
etching a portion of the silicon film conformally such that a state in which the second film thickness is thicker than the first film thickness is maintained, by supplying an etching gas to the substrate,
wherein the set number of times is set based on a target step coverage which is a target ratio of the first film thickness to the second film thickness.