US 11,658,026 B2
Conformal silicon oxide film deposition
Zeqing Shen, San Jose, CA (US); Bo Qi, San Jose, CA (US); and Abhijit Basu Mallick, Palo Alto, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Oct. 23, 2020, as Appl. No. 17/78,985.
Prior Publication US 2022/0130658 A1, Apr. 28, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/40 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/401 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01)] 20 Claims
OG exemplary drawing
1. A method of depositing a film, the method comprising:
exposing a surface to a thermal chemical vapor deposition (CVD) process, the thermal CVD process comprising exposing the surface to a silicon precursor and nitrous oxide (N2O) at a temperature greater than or equal 200° C. and at a pressure of less than or equal to 300 Torr to form a conformal silicon-containing film on the surface, the conformal silicon-containing film having a breakdown voltage of greater than 8 MV/cm at a leakage current of 1 mA/cm2 and a leakage current of less than 1 nA/cm2 at 2 MV/cm.