US 11,658,025 B2
Chalcogen precursors for deposition of silicon nitride
Chandan Kr Barik, West Bengal (IN); Michael Haverty, Mountain View, CA (US); Muthukumar Kaliappan, Fremont, CA (US); Cong Trinh, Santa Clara, CA (US); Bhaskar Jyoti Bhuyan, San Jose, CA (US); John Sudijono, Singapore (SG); Anil Kumar Tummanapelli, Telangana (IN); Richard Ming Wah Wong, Singapore (SG); and Yingqian Chen, Singapore (SG)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US); and National University of Singapore, Singapore (SG)
Filed on Jan. 18, 2021, as Appl. No. 17/151,240.
Prior Publication US 2022/0230874 A1, Jul. 21, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01)
CPC H01L 21/02211 (2013.01) [C23C 16/345 (2013.01); C23C 16/4408 (2013.01); C23C 16/45553 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01)] 12 Claims
OG exemplary drawing
1. A method of depositing a film, the method comprising:
exposing a substrate to a chalcogen precursor, the chalcogen precursor comprising one or more of a thiosilane, a selinosilane, and a tellurosilane and having a structure of Formula (I) MenSi(MR)4-n or Formula (II) Si(MR)4, wherein n is from 3 to 1, M is selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te), and R is selected from the group consisting of Ph, Ph-(p-CH3), Ph-(2,4,6-CH3), Ph-(p-CF3), and Ph-(p-NO2); and
exposing the substrate to a reactant to form a silicon nitride (SixNy) film on the substrate.