US 11,658,024 B2
Semiconductor device and method of manufacturing the same
Jeonggyu Song, Seongnam-si (KR); Kyooho Jung, Seoul (KR); Yongsung Kim, Suwon-si (KR); Jeongil Bang, Suwon-si (KR); Jooho Lee, Hwaseong-si (KR); Junghwa Kim, Yongin-si (KR); Haeryong Kim, Seunnam-si (KR); and Myoungho Jeong, Seongnam-si (KR)
Assigned to Samsung Electronics Co.. Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 15, 2020, as Appl. No. 17/71,310.
Application 17/071,310 is a continuation of application No. 16/520,990, filed on Jul. 24, 2019, granted, now 10,867,784.
Claims priority of application No. 10-2019-0022733 (KR), filed on Feb. 26, 2019.
Prior Publication US 2021/0043445 A1, Feb. 11, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/02181 (2013.01) [H01L 21/0245 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02403 (2013.01); H01L 21/02472 (2013.01); H01L 21/02667 (2013.01); H01L 21/76871 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01)] 10 Claims
OG exemplary drawing
1. A semiconductor device in which a field effect transistor and a capacitor are electrically connected,
wherein the field effect transistor comprises a semiconductor layer which includes a source and a drain, a dielectric layer on the semiconductor layer, and a gate electrode on the dielectric layer,
wherein the capacitor comprises a first electrode, a second electrode disposed to be spaced apart from the first electrode, a hafnium oxide (HfOx) layer crystallized and disposed between the first electrode and the second electrode, and a seed layer on the hafnium oxide layer,
wherein the seed layer comprises a hafnium cobalt oxide (HfCoOx) or hafnium silicon oxide (HfSiOx), and
wherein the hafnium oxide layer has a permittivity in a range from about 30 to about 70.