US 11,658,011 B2
Plasma processing apparatus
Yoshiharu Inoue, Yamaguchi (JP); Tetsuo Ono, Yamaguchi (JP); Michikazu Morimoto, Yamaguchi (JP); Masaki Fujii, Yamaguchi (JP); and Masakazu Miyaji, Yamaguchi (JP)
Assigned to HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
Filed by HITACHI HIGH-TECHNOLOGIES CORPORATION, Tokyo (JP)
Filed on Jan. 22, 2020, as Appl. No. 16/749,180.
Application 16/749,180 is a division of application No. 15/091,730, filed on Apr. 6, 2016, granted, now 10,600,619.
Application 15/091,730 is a continuation of application No. 14/452,578, filed on Aug. 6, 2014, granted, now 9,349,603, issued on May 24, 2016.
Application 14/452,578 is a continuation of application No. 13/363,415, filed on Feb. 1, 2012, granted, now 8,828,254, issued on Sep. 9, 2014.
Claims priority of application No. 2011-163831 (JP), filed on Jul. 27, 2011; application No. 2011-211896 (JP), filed on Sep. 28, 2011; and application No. 2011-232446 (JP), filed on Oct. 24, 2011.
Prior Publication US 2020/0161092 A1, May 21, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/32 (2006.01); H01L 21/3213 (2006.01); H01L 21/3065 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01)
CPC H01J 37/32266 (2013.01) [H01J 37/3266 (2013.01); H01J 37/32192 (2013.01); H01J 37/32935 (2013.01); H01L 21/3065 (2013.01); H01L 21/32137 (2013.01); H01L 21/67069 (2013.01); H01L 22/26 (2013.01); H01J 2237/2485 (2013.01); H01J 2237/334 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A plasma processing apparatus for eliminating a discharge flicker that is observed in a light emission of plasma when microwave power applied to the plasma is changed, wherein a discharge flicker in a light emission of plasma indicates an unstable discharge region, and for avoiding a mode jump power region occurring over a range of microwave power values, the plasma processing apparatus comprising:
a processing chamber configured to plasma etch a sample;
a microwave configured to supply microwave power for generating plasma into the processing chamber;
a pulse generator attached to a magenetron configured to generate a pulse for pulse modulation of the microwave power;
a sample stage configured to hold the sample;
a light-measuring device;
a control computer configured to:
control the microwave such that the microwave supplies continuous microwave power over a range of microwave power values, wherein when the control computer causes the microwave to change the microwave power, a discharge flicker occurs in a light emission of the plasma,
identify, via the light-measuring device, a power region in which the discharge flicker occurred,
control the pulse generator, such that the microwave power is ON-OFF pulse-modulated at a set frequency, wherein, during ON periods, the control computer causes the pulse generator to set the microwave to a microwave power value higher than the identified power region in which the discharge flicker occurred,
identify a mode jump power region, wherein the control computer is configured to extract and store light emission intensity values representing a region in which the light emission intensity values of the plasma suddenly changed,
control the microwave power supply so as to provide a microwave power value higher than a microwave power value in the mode jump power region when generating plasma by continuous discharge to the processing chamber, and
control the pulse generator such that pulse modulation is automatically performed when the microwave power values correspond to the mode jump power region, so as to generate the pulse of a duty ratio to control the time average value of the microwave power by pulse modulating the microwave power of the microwave, setting the microwave power during ON to a value higher than a microwave power value in the mode jump power region, and changing a duty ratio of the pulse modulation.