US 11,657,871 B2
Memristive device and method based on ion migration over one or more nanowires
Sheldon Kent Meredith, Roswell, GA (US); Yevgeniy Puzyrev, Cumming, GA (US); and William C. Cottrill, Canton, GA (US)
Assigned to AT&T Intellectual Property I, L.P., Atlanta, GA (US)
Filed by AT&T Intellectual Property I, L.P., Atlanta, GA (US)
Filed on Jul. 14, 2021, as Appl. No. 17/375,813.
Application 17/375,813 is a continuation of application No. 16/922,786, filed on Jul. 7, 2020, granted, now 11,100,982.
Application 16/922,786 is a continuation of application No. 16/159,075, filed on Oct. 12, 2018, granted, now 10,748,608, issued on Aug. 18, 2020.
Prior Publication US 2021/0343339 A1, Nov. 4, 2021
Int. Cl. G11C 13/00 (2006.01); H01L 45/00 (2006.01); B82Y 10/00 (2011.01)
CPC G11C 13/0007 (2013.01) [G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H01L 45/08 (2013.01); H01L 45/1266 (2013.01); H01L 45/146 (2013.01); B82Y 10/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
applying, by a processing system including a processor, a first setting voltage across a first electrode and a second electrode, each of the first electrode and the second electrode being part of a device that further includes a third electrode, a first metal-oxide spanning nanowire, a second metal-oxide spanning nanowire, a first metal-oxide gapping nanowire, and a second metal-oxide gapping nanowire, the first metal-oxide spanning nanowire initially having a first electrical resistance and being electrically connected between the first electrode and the second electrode, the first metal-oxide gapping nanowire being disposed adjacent to the first metal-oxide spanning nanowire, a first gap being formed between the first metal-oxide spanning nanowire and the first metal-oxide gapping nanowire, the applying of the first setting voltage causing a first migration of first ions from one or more of the first electrode and the second electrode to a first surface of the first metal-oxide spanning nanowire, the first metal-oxide gapping nanowire being configured to force at least some of the first ions to settle in a first potential well at a first location along the first metal-oxide spanning nanowire, the first migration of the first ions causing a first reduction of electrical resistance of the first metal-oxide spanning nanowire from the first electrical resistance, and the first reduction of the electrical resistance of the first metal-oxide spanning nanowire causing entry into a first memory state associated with the first electrode and the second electrode; and
applying, by the processing system, a second setting voltage across the second electrode and the third electrode, the second metal-oxide spanning nanowire initially having a second electrical resistance and being electrically connected between the second electrode and the third electrode, the second metal-oxide gapping nanowire being disposed adjacent to the second metal-oxide spanning nanowire, a second gap being formed between the second metal-oxide spanning nanowire and the second metal-oxide gapping nanowire, the applying of the second setting voltage causing a second migration of second ions from one or more of the second electrode and the third electrode to a second surface of the second metal-oxide spanning nanowire, the second metal-oxide gapping nanowire being configured to force at least some of the second ions to settle in a second potential well at a second location along the second metal-oxide spanning nanowire, the second migration of the second ions causing a second reduction of electrical resistance of the second metal-oxide spanning nanowire from the second electrical resistance, and the second reduction of the electrical resistance of the second metal-oxide spanning nanowire causing entry into a second memory state associated with the second electrode and the third electrode.