US 11,656,301 B2
Magnetic sensor including magnetoresistive effect element and sealed chip
Yuta Saito, Tokyo (JP); Hiraku Hirabayashi, Tokyo (JP); and Yoshihiro Kudo, Tokyo (JP)
Assigned to TDK Corporation, Tokyo (JP)
Filed by TDK Corporation, Tokyo (JP)
Filed on Jun. 27, 2022, as Appl. No. 17/850,391.
Application 17/850,391 is a continuation of application No. 17/094,171, filed on Nov. 10, 2020, abandoned.
Claims priority of application No. JP2019-208486 (JP), filed on Nov. 19, 2019.
Prior Publication US 2022/0326320 A1, Oct. 13, 2022
Int. Cl. G01R 33/09 (2006.01)
CPC G01R 33/093 (2013.01) [G01R 33/098 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A magnetic sensor comprising:
a magnetic sensor chip that includes a magnetoresistive effect element; and
a sealed part that seals the magnetic sensor chip;
wherein the magnetoresistive effect element includes a free layer and a pinned layer;
the magnetization direction of the free layer can change in accordance with an external magnetic field;
the magnetization direction of the pinned layer is fixed;
the sealed part has a first surface and a second surface, which is opposite the first surface;
a shape of the sealed part in a plan view from the first surface side is substantially quadrilateral;
the substantially quadrilateral shape has a first side and a second side, which are substantially parallel to each other, and a third side and a fourth side, which are substantially parallel to each other and that intersect the first side and the second side;
in the plan view from the first surface side of the sealed part, the magnetization direction of the pinned layer, in a state in which the external magnetic field is not applied on the magnetoresistive effect element, is inclined with respect to an approximately straight line found through the least squares method using a plurality of points arbitrarily set on the first side; and
in the plan view from the first surface side of the sealed part, the magnetization direction of the free layer, in a state in which the external magnetic field is not applied on the magnetoresistive effect element, is substantially orthogonal to the magnetization direction of the pinned layer.