US 11,656,266 B2
Method and system for online monitoring of health status of insulated-gate bipolar transistor module
Yigang He, Hubei (CN); Weibo Yuan, Hubei (CN); Guolong Shi, Hubei (CN); Liulu He, Hubei (CN); Chaolong Zhang, Hubei (CN); and Bolun Du, Hubei (CN)
Assigned to WUHAN UNIVERSITY, Hubei (CN)
Filed on Dec. 17, 2020, as Appl. No. 17/124,496.
Claims priority of application No. 202010286330.7 (CN), filed on Apr. 13, 2020.
Prior Publication US 2021/0318373 A1, Oct. 14, 2021
Int. Cl. G01R 31/26 (2020.01)
CPC G01R 31/2608 (2013.01) [G01R 31/2601 (2013.01)] 16 Claims
OG exemplary drawing
1. A method for online monitoring of a health status of a plurality of insulated-gate bipolar transistor (IGBT) modules coupled in parallel, each IGBT module comprising at least one IGBT, the method comprising:
determining an abnormal IGBT module from the IGBT modules according to a collector current value of each IGBT module among the IGBT modules;
extracting the collector current value of the abnormal IGBT module to be compared with a maximum value among measured collector current values of normal IGBT modules determined from the IGBT modules to obtain a current imbalance rate of the abnormal IGBT module;
determining a type of abnormality of the abnormal IGBT module according to a case temperature of each IGBT module among the IGBT modules; and
substituting for the current imbalance rate and the case temperature of the abnormal IGBT module into a parallel IGBT health status detection model for the abnormal IGBT module, and determining whether the abnormal IGBT module fails according to the type of abnormality of the abnormal IGBT module.