US 11,656,245 B2
Method and device for measuring dimension of semiconductor structure
Zheng Li, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Anhui (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Aug. 3, 2021, as Appl. No. 17/392,430.
Application 17/392,430 is a continuation of application No. PCT/CN2021/098842, filed on Jun. 8, 2021.
Claims priority of application No. 202110053191.8 (CN), filed on Jan. 15, 2021.
Prior Publication US 2022/0229087 A1, Jul. 21, 2022
Int. Cl. G01Q 60/24 (2010.01); G01Q 20/00 (2010.01); G01Q 10/02 (2010.01)
CPC G01Q 60/24 (2013.01) [G01Q 10/02 (2013.01); G01Q 20/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for measuring dimension of a semiconductor structure, comprising:
controlling a probe of an Atomic Force Microscope (AFM) to move a first distance from a preset reference position to a top surface of a semiconductor structure to be measured in a direction perpendicular to the top surface of the semiconductor structure to be measured;
controlling the probe to scan the top surface of the semiconductor structure to be measured while keeping the first distance in a direction parallel to the top surface of the semiconductor structure to be measured, and detecting amplitudes of the probe at respective scanning points on the top surface of the semiconductor structure to be measured; and
determining a Critical Dimension (CD) of the semiconductor structure to be measured according to the amplitudes of the probe at respective scanning points on the top surface of the semiconductor structure to be measured;
wherein the amplitudes of the probe are extents of oscillations of the probe.