US 11,656,128 B2
Microelectromechanical infrared sensing device and fabrication method thereof
Chin-Jou Kuo, Tainan (TW); Bor-Shiun Lee, New Taipei (TW); and Ming-Fa Chen, Taoyuan (TW)
Assigned to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu (TW)
Filed by INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu (TW)
Filed on Apr. 26, 2022, as Appl. No. 17/729,884.
Claims priority of provisional application 63/230,471, filed on Aug. 6, 2021.
Claims priority of application No. 111102112 (TW), filed on Jan. 19, 2022.
Prior Publication US 2023/0040320 A1, Feb. 9, 2023
Int. Cl. G01J 5/20 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01)
CPC G01J 5/20 (2013.01) [B81B 3/0072 (2013.01); B81C 1/00666 (2013.01); B81B 2201/0278 (2013.01); B81B 2203/04 (2013.01); B81C 2201/0104 (2013.01); B81C 2201/0107 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A microelectromechanical (MEMS) infrared sensing device, comprising:
a substrate; and
an infrared sensing element provided above the substrate, wherein the infrared sensing element has a sensing area and an infrared absorbing area which do not overlap each other, and the infrared sensing element comprising:
two infrared absorbing structures, wherein each of the two infrared absorbing structures comprises at least one infrared absorbing layer, and the two infrared absorbing structures are located in the sensing area and the infrared absorbing area;
an infrared sensing layer provided between the two infrared absorbing structures, wherein the infrared sensing layer is located in the sensing area and does not extend into the infrared absorbing area; and
an interdigitated electrode structure located in the sensing area, wherein the interdigitated electrode structure is in electrical contact with the infrared sensing layer.