US 11,656,127 B2
High-bandwidth thermoelectric thin-film UV, visible light and infrared radiation sensor and a method for manufacturing thereof
Martins Rutkis, Salaspils pagasts (LV); Aivars Vembris, Riga (LV); Kaspars Pudzs, Baldone (LV); and Janis Busenbergs, Riga (LV)
Assigned to LATVIJAS UNIVERSITATES CIETVIELU FIZIKAS INSTITUTS, Riga (LV)
Appl. No. 17/606,622
Filed by LATVIJAS UNIVERSITATES CIETVIELU FIZIKAS INSTITUTS, Riga (LV)
PCT Filed Sep. 20, 2019, PCT No. PCT/IB2019/057963
§ 371(c)(1), (2) Date Oct. 26, 2021,
PCT Pub. No. WO2020/095126, PCT Pub. Date May 14, 2020.
Claims priority of application No. P-19-24 (LV), filed on Apr. 26, 2019.
Prior Publication US 2022/0364929 A1, Nov. 17, 2022
Int. Cl. G01J 5/12 (2006.01)
CPC G01J 5/12 (2013.01) 9 Claims
OG exemplary drawing
 
1. A thermoelectric thin-film UV, visible light and infrared radiation sensor, having signal rise time <10 ns and fall time <1 μs, comprising: a 100-1000 nm thick thermoelectric active layer, an electrode layer one and an electrode layer two, wherein the electrode layer one is located below the thermoelectric active layer and the electrode layer two is located above the thermoelectric active layer, whereby the sensor is designed so that the thermal gradient can be created and the electrical voltage can be measured perpendicular to the thermoelectric active layer, between the electrode layer one and the electrode layer two, wherein the material of the thermoelectric active layer is low molecular weight organic compound, selected from the group consisting of metal phthalocyanines, perylene derivatives and polyacene derivatives, so that its thermal conductivity would be less than

OG Complex Work Unit Math
Seebeck coefficient modulus would be greater than

OG Complex Work Unit Math
and its molecular weight is less than 900 Da.