US 11,655,559 B2
High resistivity single crystal silicon ingot and wafer having improved mechanical strength
Soubir Basak, Chandler, AZ (US); Igor Peidous, Eaton, OH (US); Carissima Marie Hudson, St. Charles, MO (US); HyungMin Lee, ChungNam (KR); ByungChun Kim, ChungNam (KR); and Robert J. Falster, London (GB)
Assigned to GlobalWafers Co., Ltd., Hsinchu (TW)
Filed by GlobalWafers Co., Ltd., Hsinchu (TW)
Filed on Sep. 10, 2021, as Appl. No. 17/471,453.
Application 17/471,453 is a continuation of application No. 16/303,195, granted, now 11,142,844, previously published as PCT/US2017/036061, filed on Jun. 6, 2017.
Claims priority of provisional application 62/347,145, filed on Jun. 8, 2016.
Claims priority of provisional application 62/347,143, filed on Jun. 8, 2016.
Prior Publication US 2021/0404088 A1, Dec. 30, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. C30B 29/06 (2006.01); C30B 15/00 (2006.01); C30B 15/10 (2006.01); C30B 15/30 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01)
CPC C30B 29/06 (2013.01) [C30B 15/007 (2013.01); C30B 15/10 (2013.01); C30B 15/305 (2013.01); H01L 21/02005 (2013.01); H01L 21/02123 (2013.01); H01L 21/28167 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A single crystal silicon wafer comprising:
two major, parallel surfaces, one of which is a front surface of the single crystal silicon wafer and the other of which is a back surface of the single crystal silicon wafer, a circumferential edge joining the front and back surfaces of the single crystal silicon wafer, a bulk region between the front and back surfaces, and a central plane of the single crystal silicon wafer between the front and back surfaces of the single crystal silicon wafer, wherein:
(a) the bulk region comprises nitrogen at a nitrogen concentration of at least about 1×1014 atoms/cm3;
(b) the bulk region comprises germanium at a germanium concentration of at least about 1×1019 atoms/cm3 and less than about 1×1022 atoms/cm3;
(c) the bulk region comprises interstitial oxygen at an interstitial oxygen concentration of less than about 6 ppma (New ASTM: ASTM F 121, 1980-1983; DIN 50438/1, 1978); and
(d) the bulk region of the single crystal silicon wafer has a resistivity of at least about 10,000 ohm cm.