US 11,655,556 B2
Flow assisted dynamic seal for high-convection, continuous-rotation plating
Aaron Berke, Portland, OR (US); Stephen J. Banik, Portland, OR (US); Bryan Buckalew, Tualatin, OR (US); and Robert Rash, West Linn, OR (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Apr. 6, 2020, as Appl. No. 16/841,597.
Application 16/841,597 is a continuation of application No. 16/044,412, filed on Jul. 24, 2018, granted, now 10,612,151.
Claims priority of provisional application 62/636,818, filed on Feb. 28, 2018.
Prior Publication US 2020/0232114 A1, Jul. 23, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/288 (2006.01); C25D 7/12 (2006.01); C25D 5/08 (2006.01); C25D 17/00 (2006.01)
CPC C25D 17/001 (2013.01) [C25D 5/08 (2013.01); C25D 7/123 (2013.01); C25D 17/004 (2013.01); H01L 21/2885 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An electroplating apparatus for semiconductor wafer fabrication, comprising:
a cup member;
an insert member that circumscribes the cup member, the insert member disposed below an outer radial portion of a bottom surface of the cup member; and
a seal member having an annular-shaped structure, the seal member disposed on a top surface of the insert member such that an outer radial portion of the seal member conforms to an upward slope of the top surface of the insert member and an inner radial portion of the seal member projects inward from an apex of the top surface of the insert member, wherein the inner radial portion of the seal member is positioned below the outer radial portion of the bottom surface of the cup member such that the inner radial portion of the seal member contacts the outer radial portion of the bottom surface of the cup member when the cup member is moved downward to contact the seal member.