US 11,655,540 B2
Methods and apparatus for adjusting wafer performance using multiple RF generators
Chong Jiang, Cupertino, CA (US); and Malcolm Delaney, Los Gatos, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed on Jun. 26, 2020, as Appl. No. 16/912,887.
Prior Publication US 2021/0404065 A1, Dec. 30, 2021
Int. Cl. C23C 16/52 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01)
CPC C23C 16/52 (2013.01) [C23C 16/45536 (2013.01); C23C 16/505 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An apparatus for controlling a semiconductor process, comprising:
an adjustable phase shift assembly with a conductive trace and an adjustable contact point, wherein the adjustable phase shift assembly is configured to be disposed between a first RF frequency generator and a second RF frequency generator using one or more cables, wherein the adjustable phase shift assembly is configured to alter at least one wafer performance parameter by changing a phase shift relationship between the first RF frequency generator and the second RF frequency generator, wherein the conductive trace is a recursive trace with a pattern that moves back and forth without overlapping as a length of the conductive trace progresses, and wherein the adjustable contact point is configured to move across the recursive trace.