US 11,655,538 B2
Precursor for chemical vapor deposition, and light-blocking container containing precursor for chemical vapor deposition and method for producing the same
Fumikazu Mizutani, Sakado (JP); and Shintaro Higashi, Sakado (JP)
Assigned to KOJUNDO CHEMICAL LABORATORY CO., LTD., Sakado (JP)
Appl. No. 16/617,598
Filed by KOJUNDO CHEMICAL LABORATORY CO., LTD., Sakado (JP)
PCT Filed Jun. 4, 2018, PCT No. PCT/JP2018/021318
§ 371(c)(1), (2) Date Nov. 27, 2019,
PCT Pub. No. WO2018/225668, PCT Pub. Date Dec. 13, 2018.
Claims priority of application No. JP2017-113957 (JP), filed on Jun. 9, 2017.
Prior Publication US 2020/0181775 A1, Jun. 11, 2020
Int. Cl. C01G 15/00 (2006.01); C23C 16/455 (2006.01); C07F 5/00 (2006.01); C23C 16/40 (2006.01); H01B 1/08 (2006.01); H01B 13/00 (2006.01)
CPC C23C 16/45553 (2013.01) [C01G 15/00 (2013.01); C07F 5/00 (2013.01); C23C 16/407 (2013.01); H01B 1/08 (2013.01); H01B 13/0036 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A precursor for chemical vapor deposition consisting essentially of a liquid mixture of alkylcyclopentadienylindium (I) having a formula C5H4R1—In wherein R1 is an alkyl group having 1 to 4 carbon atoms as a main component, and one or more secondary component selected from the group consisting of alkylcyclopentadiene having a formula C5H5R2 wherein R2 is an alkyl group having 1 to 4 carbon atoms, dialkylcyclopentadiene having a formula (C5H5R3)2 wherein R3 is an alkyl group having 1 to 4 carbon atoms, trisalkylcyclopentadienylindium (III) having a formula (C5H4R4)3—In wherein R4 is an alkyl group having 1 to 4 carbon atoms and triscyclopentadienyl indium (III), the number of carbon atoms of R1 to R4 being equal,
wherein the precursor does not comprise any solvents, and
wherein the precursor is a liquid at 23° C. under ordinary pressure.