US 11,655,537 B2
HDP sacrificial carbon gapfill
Zeqing Shen, San Jose, CA (US); Bo Qi, San Jose, CA (US); and Abhijit Basu Mallick, Palo Alto, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Oct. 26, 2020, as Appl. No. 17/79,630.
Prior Publication US 2022/0127718 A1, Apr. 28, 2022
Int. Cl. C23C 16/04 (2006.01); C23C 16/505 (2006.01); H01L 21/768 (2006.01)
CPC C23C 16/045 (2013.01) [C23C 16/505 (2013.01); H01L 21/76837 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of forming a film, the method comprising:
flowing a process gas into a high density plasma chemical vapor deposition (HDP-CVD) chamber, the chamber housing a substrate having at least one feature, the process gas comprising a hydrocarbon reactant having a hydrogen to carbon (H:C) ratio that is less than or equal to 2:1 and one or more of hydrogen (H2), helium (He), and argon (Ar), the substrate processed at a temperature in a range of from about 400° C. to about 650° C. and a pressure of less than about 20 mTorr;
generating a plasma having a density greater than 1017 ions/m3; and
depositing a carbon film in the at least one feature, the carbon film having a void in the at least one feature.
 
8. A method of forming a film, the method comprising:
flowing a process gas into a high density plasma chemical vapor deposition (HDP-CVD) chamber, the chamber housing a substrate having a substrate surface, the process gas comprising a hydrocarbon reactant having a hydrogen to carbon (H:C) ratio that is less than or equal to 2:1 and one or more of hydrogen (H2), helium (He), and argon (Ar), the substrate processed at a temperature in a range of from about 400° C. to about 650° C. and a pressure of less than about 20 mTorr;
generating a plasma having a density greater than 1017 ions/m3; and
depositing a carbon film on the substrate surface, the substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall, wherein the carbon film is deposited on the substrate surface, the first sidewall, the second sidewall, and the bottom surface of the at least one feature, the carbon film having a void located within the width of the feature at a first distance from the bottom surface of the feature.
 
15. A method of manufacturing a memory device, the method comprising:
forming a film stack on a substrate, the film stack comprising a plurality of alternating layers of first material and a second material and the film stack having a stack thickness;
etching the film stack to form a memory hole opening extending a depth from a top surface of the film stack to a bottom surface, the memory hole opening having a width defined by a first sidewall and a second sidewall;
loading the substrate into a high density plasma chemical vapor deposition (HDP-CVD) chamber;
flowing a process gas into the high density plasma chemical vapor deposition (HDP-CVD) chamber, the process gas comprising a hydrocarbon reactant having a hydrogen to carbon (H:C) ratio that is less than or equal to 2:1 and one or more of hydrogen (H2), helium (He), and argon (Ar), the substrate being processed at a temperature in a range of from about 400° C. to about 650° C., a pressure of less than about 20 mTorr, and at a plasma density greater than 1017 ions/m3; and
depositing a carbon film on the top surface of the film stack, and on the first sidewall, the second sidewall, and the bottom surface of the memory hole opening, the carbon film having a void located within the width of the memory hole opening at a first distance from the bottom surface of the memory hole opening.