US 11,655,159 B2
Dielectric film, dielectric element, and electronic circuit board
Toshio Asahi, Tokyo (JP); Masamitsu Haemori, Tokyo (JP); and Hitoshi Saita, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on Oct. 15, 2020, as Appl. No. 17/71,474.
Claims priority of application No. JP2019-199391 (JP), filed on Oct. 31, 2019.
Prior Publication US 2021/0130187 A1, May 6, 2021
Int. Cl. C04B 35/465 (2006.01); C04B 35/47 (2006.01); H01G 4/10 (2006.01); H01G 4/12 (2006.01); C01G 23/00 (2006.01); C23C 16/40 (2006.01); C23C 16/06 (2006.01); C23C 16/56 (2006.01); H01G 4/33 (2006.01); H05K 1/18 (2006.01)
CPC C01G 23/006 (2013.01) [C23C 16/06 (2013.01); C23C 16/409 (2013.01); C23C 16/56 (2013.01); H01G 4/10 (2013.01); H01G 4/33 (2013.01); H05K 1/185 (2013.01); C01P 2002/52 (2013.01); C01P 2002/72 (2013.01); C01P 2002/74 (2013.01); C01P 2006/40 (2013.01); H05K 2201/10015 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A dielectric film comprising a main component of a complex oxide represented by a general formula of (Sr1-xCax)yTiO3, wherein
0.40≤x≤0.90 and 0.90≤y≤1.10 are satisfied, and
a ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more.