US 11,654,461 B2
Plasma ashing method using residue gas analyzer
Chun-Jen Hsiao, Hsinchu (TW); Ya-Ping Chen, Hsinchu (TW); Chien-Hung Lin, Hsinchu (TW); Wen-Pin Liu, Hsinchu County (TW); and Chin-Wen Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 21, 2021, as Appl. No. 17/326,430.
Application 17/326,430 is a continuation of application No. 16/503,571, filed on Jul. 4, 2019, granted, now 11,020,778.
Claims priority of provisional application 62/696,888, filed on Jul. 12, 2018.
Prior Publication US 2021/0268555 A1, Sep. 2, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/027 (2006.01); G03F 7/42 (2006.01); B08B 7/00 (2006.01); H01J 37/32 (2006.01)
CPC B08B 7/0035 (2013.01) [G03F 7/427 (2013.01); H01L 21/0273 (2013.01); H01J 37/32082 (2013.01); H01J 2237/335 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A plasma ashing method, comprising:
analyzing a process status of each of a plurality of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer, wherein the tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes; and
selecting one of the tested recipes as a process recipe for a plasma ash process.
 
10. A plasma ashing method, comprising:
detecting an ion signal related to a selected type of gas molecule in a byproduct gas discharged from a plasma ashing apparatus during a plasma ash process by a residue gas analyzer; and
comparing the ion signal detected at a selected time point with an expected ion signal associated with the selected time point to determine if a difference between the detected ion signal and the expected ion signal exceeds a range of acceptable values associated with the selected time point.
 
17. A plasma ashing method, comprising:
detecting an ion signal related to a selected type of gas molecule in a byproduct gas discharged from the plasma ashing apparatus during a plasma ash process by a residue gas analyzer;
comparing the ion signal detected at a selected time point with an expected ion signal associated within the selected time point; and
adjusting a process recipe for the plasma ash process to calibrate the detected ion signal with the expected ion signal.