US RE50,440 E1
Organic light emitting display device
Ki-Woog Song, Goyang-si (KR); Chang-Wook Han, Seoul (KR); Hong-Seok Choi, Seoul (KR); Sung-Hoon Pieh, Seoul (KR); Jeong-Dae Seo, Incheon (KR); Seok-Joon Oh, Paju-si (KR); and Youn-Seok Kam, Seoul (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on May 10, 2023, as Appl. No. 18/195,864.
Application 18/195,864 is a reissue of application No. 14/097,675, filed on Dec. 5, 2013, granted, now 11,005,061, issued on May 11, 2021.
Claims priority of application No. 10-2012-0158195 (KR), filed on Dec. 31, 2012; and application No. 10-2013-0062631 (KR), filed on May 31, 2013.
Int. Cl. H01L 51/50 (2006.01); H01L 27/32 (2006.01); H01L 51/52 (2006.01); H10K 50/11 (2023.01); H10K 50/13 (2023.01); H10K 50/19 (2023.01); H10K 59/35 (2023.01); H10K 101/30 (2023.01); H10K 101/40 (2023.01)
CPC H10K 50/131 (2023.02) [H10K 50/11 (2023.02); H10K 50/19 (2023.02); H10K 59/351 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02)] 33 Claims
OG exemplary drawing
 
1. An organic light emitting display device comprising:
a first electrode and a second electrode disposed on a substrate opposite to [ spaced from ] each other;
a first stack comprising a hole injection layer, a first hole transport layer, a first light emitting layer, and a first electron transport layer sequentially stacked on the first electrode;
a second stack comprising a second hole transport layer, a second light emitting layer, and a second electron transport layer sequentially stacked between the first stack and the second electrode; and
a charge generation layer disposed between the first stack and the second stack and comprising an [ at least one ] N-type charge generation layer and at least one P-type charge generation layer to control charge balance between the first and second stacks,
wherein the at least one P-type charge generation layer is composed of HAT(CN)6 doped with 1% to 20% [ 10% ] of a hole transport material based on a volume of the at least one P-type charge generation layer, wherein the hole transport material has a highest occupied molecular orbital (HOMO) level of 5.0 eV to 6.0 eV; and
wherein a thickness of a region in which the hole transport material is doped satisfies Expression 1 below to be at least 10% or greater of a total thickness of the at least one P-type charge generation layer:
L×0.1≤X≤L,  Expression 1
where L is a thickness of the at least one P-type charge generation layer, and X is a thickness of the region in which the hole transport material is doped.