US 12,310,181 B2
Transistor array panel, manufacturing method thereof, and display device including the same
Hyuk Soon Kwon, Asan-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-Si (KR)
Filed on Jul. 26, 2023, as Appl. No. 18/226,251.
Application 18/226,251 is a continuation of application No. 17/225,174, filed on Apr. 8, 2021, granted, now 11,751,433.
Application 17/225,174 is a continuation of application No. 16/686,033, filed on Nov. 15, 2019, granted, now 10,991,784, issued on Apr. 27, 2021.
Application 16/686,033 is a continuation of application No. 15/481,273, filed on Apr. 6, 2017, granted, now 10,483,340, issued on Nov. 19, 2019.
Claims priority of application No. 10-2016-0042782 (KR), filed on Apr. 7, 2016.
Prior Publication US 2023/0371309 A1, Nov. 16, 2023
Int. Cl. H10K 59/121 (2023.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/131 (2023.01); H10K 71/00 (2023.01)
CPC H10K 59/1213 (2023.02) [H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/131 (2023.02); H10K 71/00 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A transistor display panel comprising:
a substrate;
a lower electrode disposed on the substrate;
a buffer layer disposed on the lower electrode;
a transistor disposed on the substrate; and
a pixel electrode electrically connected to the transistor,
wherein the transistor includes:
a semiconductor layer disposed on the substrate;
a gate electrode overlapping a part of the semiconductor layer; and
a first electrode and a second electrode disposed on the gate electrode,
wherein the lower electrode is electrically connected to the pixel electrode, and
wherein the lower electrode is disposed between the substrate and the transistor along a thickness direction of the substrate.