US 12,310,166 B2
Light-emitting device, manufacturing method thereof, and display device
Haiyan Sun, Beijing (CN); and Xiaojin Zhang, Beijing (CN)
Assigned to BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 17/615,424
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Feb. 24, 2021, PCT No. PCT/CN2021/077611
§ 371(c)(1), (2) Date Nov. 30, 2021,
PCT Pub. No. WO2022/178702, PCT Pub. Date Sep. 1, 2022.
Prior Publication US 2023/0171983 A1, Jun. 1, 2023
Int. Cl. H01L 51/50 (2006.01); H10K 50/115 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 71/13 (2023.01); H10K 71/60 (2023.01); H10K 85/10 (2023.01); H10K 85/60 (2023.01); H10K 101/30 (2023.01); H10K 102/10 (2023.01)
CPC H10K 50/15 (2023.02) [H10K 50/115 (2023.02); H10K 50/16 (2023.02); H10K 71/135 (2023.02); H10K 71/60 (2023.02); H10K 85/1135 (2023.02); H10K 85/631 (2023.02); H10K 2101/30 (2023.02); H10K 2102/103 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A light-emitting device comprising:
an anode;
a cathode;
a light-emitting layer between the anode and the cathode; and
a hole transport layer between the anode and the light-emitting layer,
wherein the hole transport layer comprises a first compound and a second compound, and
wherein an absolute value of an energy level of the highest occupied molecular orbital of the second compound is greater than or equal to 5 eV and less than or equal to 6.5 eV,
wherein a hole mobility of the second compound is greater than or equal to 10−4 cm2/Vs.
 
17. A method of manufacturing a light-emitting device, comprising:
forming an anode;
applying a mixed solution in which at least a first compound and a second compound are mixed on the anode to form a hole transport layer;
forming a light-emitting layer on a side of the hole transport layer away from the anode; and
forming a cathode on a side of the light-emitting layer away from the hole transport layer,
wherein an absolute value of an energy level of the highest occupied molecular orbital of the second compound is greater than or equal to 5 eV and less than or equal to 6.5 eV,
wherein a hole mobility of the second compound is greater than or equal to 10−4 cm2/Vs.