| CPC H10H 20/816 (2025.01) [H04B 10/11 (2013.01); H04B 10/1143 (2013.01); H04B 10/1149 (2013.01); H04B 10/116 (2013.01); H04B 10/40 (2013.01); H04B 10/502 (2013.01); H04B 10/60 (2013.01); H10F 55/25 (2025.01); H10H 20/811 (2025.01); H10H 20/812 (2025.01); H10H 20/8162 (2025.01); H10H 20/824 (2025.01); H01L 25/167 (2013.01); H04H 20/71 (2013.01); H10H 20/823 (2025.01); H10H 29/142 (2025.01)] | 20 Claims |

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1. A light-emitting diode (LED) comprising:
a substrate;
a carrier confinement (CC) region positioned over the substrate, the CC region defining:
a first CC layer comprising aluminum gallium nitride; and
a second CC layer positioned on the first CC layer, the second CC layer comprising aluminum gallium nitride; and
an active region positioned over the CC region, wherein:
the active region comprises gallium nitride; and
the active region is configured to have a transient response time of less than 500 picoseconds (ps).
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