US 12,310,147 B2
Optoelectronic device comprising light-emitting diodes having multiple quantum wells
Ivan-Christophe Robin, Grenoble (FR); Wei-Sin Tan, Grenoble (FR); and Frédéric Mayer, Voiron (FR)
Assigned to Aledia, Echirolles (FR)
Appl. No. 17/609,357
Filed by Aledia, Echirolles (FR)
PCT Filed May 18, 2020, PCT No. PCT/FR2020/050819
§ 371(c)(1), (2) Date Nov. 5, 2021,
PCT Pub. No. WO2020/234534, PCT Pub. Date Nov. 26, 2020.
Claims priority of application No. 1905332 (FR), filed on May 21, 2019.
Prior Publication US 2022/0320367 A1, Oct. 6, 2022
Int. Cl. H10H 20/812 (2025.01); H01L 25/16 (2023.01); H10H 20/816 (2025.01); H10H 20/825 (2025.01); H10H 20/857 (2025.01)
CPC H10H 20/812 (2025.01) [H01L 25/167 (2013.01); H10H 20/8162 (2025.01); H10H 20/825 (2025.01); H10H 20/857 (2025.01)] 15 Claims
OG exemplary drawing
 
1. An optoelectronic device comprising at least first and second light-emitting diodes, each comprising a first P-type doped semiconductor portion and a second N-type doped semiconductor portion, an active area comprising multiple quantum wells between the first and second semiconductor portions, a conductive layer covering the lateral walls of the active area and at least a portion of the first semiconductor portion and an insulating layer interposed between the lateral walls of the active area and of at least a portion of the conductive layer, the device comprising means for controlling the conductive layer of the first light-emitting diode independently from the conductive layer of the second light-emitting diode, the optoelectronic device comprising, for each of the first and second light-emitting diodes, a first conductive pad electrically coupled to the first semiconductor portion, a second conductive pad electrically coupled to the second semiconductor portion, and a third conductive pad electrically coupled to the conductive layer;
wherein, for each active area, the composition of the first quantum well closest to the first semiconductor portion is different from the composition of the second quantum well closest to the second semiconductor portion.