US 12,310,146 B2
Methods for die-to-wafer device layer transfer with precise control of device layer vertical position
Lei Zhang, Albuquerque, NM (US); Fang Ou, San Jose, CA (US); Lina He, San Jose, CA (US); Paul S. Drzaic, Morgan Hill, CA (US); Dmitry S. Sizov, Cupertino, CA (US); Ranojoy Bose, Fremont, CA (US); Yuewei Zhang, Santa Barbara, CA (US); Xiaobin Xin, Sunnyvale, CA (US); Nathaniel T. Lawrence, San Francisco, CA (US); and Wei H. Yao, Palo Alto, CA (US)
Assigned to Apple Inc., Cupertino, CA (US)
Filed by Apple Inc., Cupertino, CA (US)
Filed on Jan. 26, 2022, as Appl. No. 17/649,018.
Claims priority of provisional application 63/156,140, filed on Mar. 3, 2021.
Prior Publication US 2022/0285577 A1, Sep. 8, 2022
Int. Cl. H01L 33/00 (2010.01); H01L 25/16 (2023.01); H10H 20/01 (2025.01)
CPC H10H 20/018 (2025.01) [H01L 25/167 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of forming a reconstituted structure comprising:
bonding a plurality of device layer coupons on a carrier substrate with an adhesive layer, wherein each of the plurality of device layer coupons is connected with corresponding a handle substrate, wherein a plurality of rigid mechanical spacers control a distance between front surfaces of the plurality of device layer coupons and a bulk layer of the carrier substrate, wherein the adhesive layer at least partially fills spaces between the plurality of rigid mechanical spacers and the adhesive layer at least partially fills spaces between the plurality of device layer coupons;
hardening the adhesive layer;
removing each handle substrate; and
back-grinding to form a surface with the plurality of device layer coupons and the adhesive layer.