US 12,310,139 B2
Semiconductor devices with single-photon avalanche diodes and isolation structures
Jeffrey Peter Gambino, Gresham, OR (US); David T. Price, Gresham, OR (US); Marc Allen Sulfridge, Boise, ID (US); Richard Mauritzson, Meridian, ID (US); Michael Gerard Keyes, Dromcollogher (IE); Ryan Rettmann, Hopewell Junction, NY (US); and Kevin Mcstay, Hopewell Junction, NY (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed on May 24, 2024, as Appl. No. 18/673,521.
Application 18/673,521 is a continuation of application No. 17/302,836, filed on May 13, 2021, granted, now 12,034,025.
Prior Publication US 2024/0321924 A1, Sep. 26, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10F 39/00 (2025.01); H10F 39/12 (2025.01)
CPC H10F 39/807 (2025.01) [H10F 39/802 (2025.01); H10F 39/8057 (2025.01); H10F 39/199 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate having first and second opposing surfaces;
a conductive interconnect layer adjacent to the substrate, proximate to the first surface;
a photosensitive area in the substrate; and
an isolation structure in the substrate that is interposed between the photosensitive area and an adjacent photosensitive area, wherein the isolation structure extends completely through the substrate from the first surface to the second surface, wherein the isolation structure comprises a metal filler and an additional filler in a trench, wherein the trench has a p-type doped semiconductor liner, wherein the additional filler comprises polysilicon or doped silicon dioxide, and wherein the metal filler is interposed between the first surface and the additional filler in a direction orthogonal to the first surface.