US 12,310,138 B2
Photosensor having a scattering structure comprises circular ring and peripheral patterns
Eknath Sarkar, New Taipei (TW); Yichen Ma, Taipei (TW); Yu-Chieh Lee, Taipei (TW); and Chee-Wee Liu, Taipei (TW)
Assigned to Powerchip Semiconductor Manufacturing Corporation, Hsinchu (TW)
Filed by Powerchip Semiconductor Manufacturing Corporation, Hsinchu (TW)
Filed on Oct. 19, 2022, as Appl. No. 17/969,663.
Prior Publication US 2024/0136382 A1, Apr. 25, 2024
Prior Publication US 2024/0234465 A9, Jul. 11, 2024
Int. Cl. H10F 39/00 (2025.01)
CPC H10F 39/807 (2025.01) [H10F 39/8063 (2025.01); H10F 39/811 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A photosensor, comprising:
a sensing structure including:
an epitaxial layer having an illuminated surface and a non-illuminated surface;
a deep trench isolation located along an edge of the epitaxial layer;
a scattering structure embedded in the epitaxial layer and extending inwardly from the illuminated surface, wherein the scattering structure comprises a first circular ring pattern and a peripheral pattern, wherein the deep trench isolation surrounds the scattering structure, the peripheral pattern is connected with the deep trench isolation and the first circular ring pattern is separated from the peripheral pattern and the deep trench isolation; and
a microlens disposed on the sensing structure, wherein the illuminated surface of the epitaxial layer is relatively close to the microlens than the non-illuminated surface.