US 12,310,126 B2
Infrared photodetector based on van der waals heterostructure and preparation method thereof
Fang Wang, Shanghai (CN); Fuxing Dai, Shanghai (CN); Weida Hu, Shanghai (CN); Xiaoshuang Chen, Shanghai (CN); and Wei Lu, Shanghai (CN)
Assigned to SHANGHAI INSTITUTE OF TECHNICAL PHYSICS CHINESE ACADEMY OF SCIENCES, Shanghai (CN)
Filed by SHANGHAI INSTITUTE OF TECHNICAL PHYSICS CHINESE ACADEMY OF SCIENCES, Shanghai (CN)
Filed on Nov. 21, 2022, as Appl. No. 17/991,169.
Claims priority of application No. 202210920365.0 (CN), filed on Aug. 2, 2022.
Prior Publication US 2024/0047598 A1, Feb. 8, 2024
Int. Cl. H10F 30/24 (2025.01); H10F 71/00 (2025.01); H10F 77/12 (2025.01); H10F 77/20 (2025.01)
CPC H10F 30/24 (2025.01) [H10F 71/00 (2025.01); H10F 77/12 (2025.01); H10F 77/206 (2025.01)] 16 Claims
OG exemplary drawing
 
1. An infrared photodetector based on a van der waals heterostructure, wherein the infrared photodetector comprises: a fully depleted van der waals heterostructure
the fully depleted van der waals heterostructure comprises a first n-type two-dimensional semiconductor layer, a p-type two-dimensional semiconductor layer, and a second n-type two-dimensional semiconductor layer which are sequentially provided from bottom to top;
the edge of at least one side of the first n-type two-dimensional semiconductor layer is in contact with the edge of at least one side of the second n-type two-dimensional semiconductor layer, at least one side of the p-type two-dimensional semiconductor layer extends out of a gap between the first n-type two-dimensional semiconductor layer and the second n-type two-dimensional semiconductor layer to form an extension part.