US 12,310,123 B2
Light detecting device, optical device and method of manufacturing the same
Chewn-Pu Jou, Hsinchu (TW); Lan-Chou Cho, Hsinchu (TW); and Weiwei Song, San Jose, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on May 20, 2022, as Appl. No. 17/749,226.
Application 17/749,226 is a division of application No. 16/837,895, filed on Apr. 1, 2020, granted, now 11,367,803.
Prior Publication US 2022/0278247 A1, Sep. 1, 2022
Int. Cl. H10F 30/21 (2025.01); G01S 7/481 (2006.01); H10F 39/10 (2025.01); H10F 39/18 (2025.01); H10F 71/00 (2025.01); H10F 77/00 (2025.01); H10F 77/1223 (2025.01); H10F 77/124 (2025.01); H10F 77/14 (2025.01); H10F 77/40 (2025.01)
CPC H10F 30/21 (2025.01) [G01S 7/4816 (2013.01); H10F 39/107 (2025.01); H10F 39/18 (2025.01); H10F 71/121 (2025.01); H10F 71/127 (2025.01); H10F 77/1223 (2025.01); H10F 77/1243 (2025.01); H10F 77/147 (2025.01); H10F 77/413 (2025.01); H10F 77/953 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a light detecting device, comprising:
(a) providing a substrate;
(b) forming an insulating layer on the substrate;
(c) forming a silicon layer on the insulating layer;
(d) forming a light detecting layer on the silicon layer and extending within at least a portion of the silicon layer;
(e) forming two or more first doped regions of a first dopant type within the light detecting layer; and
(f) forming two or more second doped regions of a second dopant type within the light detecting layer,
wherein the first doped regions and the second doped regions are alternatingly arranged in a first direction, and
wherein at least one of the first doped regions comprises a first part within the light detecting layer and a second part extending beyond a first lateral surface of the light detecting layer in a second direction substantially perpendicular to the first direction, the first part overlaps the second doped regions as viewed in the first direction, and the second part is free from overlapping the second doped regions as viewed in the first direction.