| CPC H10D 84/811 (2025.01) [H10D 1/47 (2025.01); H10D 30/83 (2025.01)] | 11 Claims |
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1. A semiconductor device comprising:
a first region of a second conductivity type deposited at an upper part of a semiconductor base body of a first conductivity type;
a second region of the second conductivity type deposited at an upper part of the semiconductor base body so as to be in contact with the first region;
a third region of the second conductivity type deposited at an upper part of the semiconductor base body and opposed to the first region with the second region interposed so as to be in contact with the second region;
a fourth region of the first conductivity type deposited at an upper part of the semiconductor base body so as to be in contact with the second region;
an interlayer insulating film covering the second region;
a resistive element having a spiral-like planar shape provided inside the interlayer insulating film;
a first electrode wire electrically connected to the first region and one end of the resistive element;
a second electrode wire electrically connected to the third region and provided along a circumference of the resistive element;
a third electrode wire electrically connected to the fourth region and provided along the circumference of the resistive element; and
a potential-dividing terminal wire electrically connected to the resistive element,
wherein a metal wire opposed to an outermost circumference serving as a resistor of the resistive element has a part at which a gap between the metal wire and the outermost circumference is constant.
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