US 12,310,084 B2
Semiconductor device with assistant cap and method for fabricating the same
Tse-Yao Huang, Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Aug. 22, 2022, as Appl. No. 17/892,681.
Prior Publication US 2024/0063285 A1, Feb. 22, 2024
Int. Cl. H10D 64/62 (2025.01); H10D 64/01 (2025.01)
CPC H10D 64/62 (2025.01) [H10D 64/01 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a first impurity region positioned in the substrate;
a first dielectric layer positioned on the substrate;
a first contact comprising:
a buried portion positioned along the first dielectric layer and on the first impurity region; and
a protruding portion positioned on the buried portion and protruding from the first dielectric layer;
a first top assistant cap covering the protruding portion;
a first top conductive layer positioned on the first top assistant cap; and
a first bottom assistant layer positioned between the first contact and the first impurity region;
wherein the first top assistant cap comprises germanium or silicon germanium;
wherein the first contact comprises silicon and/or germanium with substantially no oxygen and nitrogen;
wherein the first bottom assistant layer comprises an epitaxial material.