| CPC H10D 64/017 (2025.01) [H01L 21/0259 (2013.01); H01L 21/28088 (2013.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6739 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/018 (2025.01)] | 19 Claims |
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1. A method comprising:
forming a fin over a substrate;
forming a dummy gate structure over the fin;
forming a source/drain region on either side of the dummy gate structure;
depositing a first interlayer dielectric (ILD) over the source/drain region;
recessing the first ILD and forming a self-align mask over the first ILD;
performing a gate replacement cycle to replace the dummy gate structure with a replacement metal gate, the gate replacement cycle comprising:
removing the dummy gate structure to form a first recess;
depositing a gate dielectric in the first recess,
forming a metal gate over the gate dielectric,
depositing a metal fill over the metal gate, and
etching back the gate dielectric, the metal gate, and the metal fill, to form an electrode fin from the metal fill; and
forming a gate contact contacting a sidewall of the electrode fin.
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