US 12,310,072 B2
Middle of line structure with stacked devices
Junli Wang, Slingerlands, NY (US); Su Chen Fan, Cohoes, NY (US); Ruqiang Bao, Niskayuna, NY (US); and Albert M. Young, Fishkill, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Dec. 10, 2021, as Appl. No. 17/547,775.
Prior Publication US 2023/0187491 A1, Jun. 15, 2023
Int. Cl. H10D 62/10 (2025.01); H01L 23/528 (2006.01); H10D 30/67 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01)
CPC H10D 62/116 (2025.01) [H01L 23/5286 (2013.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A field effect device, comprising:
a lower active gate structure on a substrate;
a first lower source/drain on a first side of the lower active gate structure;
a second lower source/drain on a second side of the lower active gate structure opposite the first side;
a first lower source/drain contact interface on the first lower source/drain;
a first upper source/drain on a first side of an upper active gate structure;
a second upper source/drain on a second side of the upper active gate structure opposite the first side;
a shared source/drain contact forming an electrical connection between the first lower source/drain and the first upper source/drain; and a lower source/drain contact forming an electrical connection to the second lower source/drain.