US 12,310,069 B2
IGBT device and method of making the same
Jia Pan, Shanghai (CN); Tongbo Zhang, Shanghai (CN); Yiping Yao, Shanghai (CN); Jiye Yang, Shanghai (CN); Junjun Xing, Shanghai (CN); Chong Chen, Shanghai (CN); Xuan Huang, Shanghai (CN); and Peng Sun, Shanghai (CN)
Assigned to SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION, Shanghai (CN)
Filed by Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai (CN)
Filed on Sep. 12, 2022, as Appl. No. 17/942,533.
Claims priority of application No. 202111148401.8 (CN), filed on Sep. 27, 2021.
Prior Publication US 2023/0101771 A1, Mar. 30, 2023
Int. Cl. H10D 62/10 (2025.01); H01L 21/265 (2006.01); H10D 12/00 (2025.01); H10D 12/01 (2025.01); H10D 62/17 (2025.01)
CPC H10D 62/111 (2025.01) [H01L 21/26513 (2013.01); H10D 12/038 (2025.01); H10D 12/481 (2025.01); H10D 62/393 (2025.01)] 9 Claims
OG exemplary drawing
 
1. An IGBT device, comprising:
a super junction structure, the super junction structure being composed of several N-type pillars and P-type pillars arranged alternately, and the super junction structure being located in an N-type substrate;
a cell unit of the IGBT device, the cell unit being located in an N-type epitaxial layer, and the N-type epitaxial layer being located above the N-type substrate;
each cell unit comprising a trench gate, a P-type body region, and a source region at the top of the P-type body region;
an N-type carrier injection layer, the N-type carrier injection layer being located in the N-type epitaxial layer, and the N-type carrier injection layer being spaced apart from the N-type substrate by the N-type epitaxial layer;
the bottom of the P-type body region being located in the N-type carrier injection layer; and
a collector region, the collector region being located at the bottom of the N-type substrate.