US 12,310,050 B2
Semiconductor structure and method of forming the same
Kan-Ju Lin, Kaohsiung (TW); Chien Chang, Hsinchu (TW); Chih-Shiun Chou, Hsinchu (TW); TaiMin Chang, Taipei (TW); Hung-Yi Huang, Hsinchu (TW); Chih-Wei Chang, Hsinchu (TW); Ming-Hsing Tsai, Chu-Pei (TW); and Lin-Yu Huang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Sep. 24, 2021, as Appl. No. 17/484,039.
Claims priority of provisional application 63/190,968, filed on May 20, 2021.
Prior Publication US 2022/0376111 A1, Nov. 24, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/13 (2025.01)
CPC H10D 30/6211 (2025.01) [H01L 21/76874 (2013.01); H10D 30/024 (2025.01); H10D 62/151 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a gate structure on a semiconductor fin;
a dielectric layer on the gate structure; and
a gate contact extending through the dielectric layer to the gate structure, the gate contact comprising:
a first conductive material on the gate structure, a top surface of the first conductive material extending between sidewalls of the dielectric layer, the top surface of the first conductive material being above a bottom surface of the dielectric layer and below a top surface of the dielectric layer;
a second conductive material on the top surface of the first conductive material, the second conductive material being different from the first conductive material; and
a glue layer, a sidewall portion of the glue layer being between the sidewalls of the dielectric layer and the second conductive material, a bottom portion of the glue layer being between the top surface of the first conductive material and the second conductive material.