US 12,310,047 B1
Laterally-diffused metal-oxide-semiconductor devices with a field plate
Guowei Zhang, Singapore (SG)
Assigned to GlobalFoundries Singapore Pte. Ltd., Singapore (SG)
Filed by GlobalFoundries Singapore Pte. Ltd., Singapore (SG)
Filed on Oct. 7, 2024, as Appl. No. 18/907,770.
Int. Cl. H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 64/00 (2025.01); H10D 64/27 (2025.01); H10D 64/66 (2025.01)
CPC H10D 30/603 (2025.01) [H10D 30/0281 (2025.01); H10D 62/115 (2025.01); H10D 62/292 (2025.01); H10D 64/112 (2025.01); H10D 64/117 (2025.01); H10D 64/516 (2025.01); H10D 64/661 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A structure for a laterally-diffused metal-oxide-semiconductor device, the structure comprising:
a semiconductor substrate including a first trench, the first trench having a bottom;
a first source in the semiconductor substrate;
a drain in the semiconductor substrate;
a first gate laterally positioned between the first trench and the first source;
a first field plate inside the first trench, the first field plate laterally positioned between the first gate and the drain;
a second field plate inside the first trench in the semiconductor substrate; and
a first gate dielectric between the first gate and the semiconductor substrate, the first gate dielectric including a first section adjacent to the first field plate and a second section adjacent to the first source, and the first section being thicker than the second section,
wherein the first field plate and the second field plate have different heights relative to the bottom of the first trench.