CPC H10D 1/688 (2025.01) [H10B 12/033 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02)] | 14 Claims |
1. A semiconductor device comprising:
a first conductive layer;
a second conductive layer;
a dielectric layer stack between the first conductive layer and the second conductive layer;
a dielectric interface layer between the dielectric layer stack and the second conductive layer; and
a high work function interface layer between the dielectric interface layer and the second conductive layer,
wherein each of the dielectric layer stack and the dielectric interface layer comprises an oxide-based material, and the high work function interface layer comprises a nitride-based material.
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