US 12,310,040 B2
Capacitor and method for fabricating the same
Myung-Soo Lee, Seoul (KR); Cheol-Hwan Park, Gyeonggi-do (KR); and Chee-Hong An, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Sep. 21, 2023, as Appl. No. 18/471,297.
Application 18/471,297 is a continuation of application No. 17/567,625, filed on Jan. 3, 2022, granted, now 11,791,374.
Application 17/567,625 is a continuation of application No. 16/824,759, filed on Mar. 20, 2020, granted, now 11,251,260, issued on Feb. 15, 2022.
Claims priority of application No. 10-2019-0107440 (KR), filed on Aug. 30, 2019.
Prior Publication US 2024/0014251 A1, Jan. 11, 2024
Int. Cl. H10D 1/68 (2025.01); H10B 12/00 (2023.01)
CPC H10D 1/688 (2025.01) [H10B 12/033 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first conductive layer;
a second conductive layer;
a dielectric layer stack between the first conductive layer and the second conductive layer;
a dielectric interface layer between the dielectric layer stack and the second conductive layer; and
a high work function interface layer between the dielectric interface layer and the second conductive layer,
wherein each of the dielectric layer stack and the dielectric interface layer comprises an oxide-based material, and the high work function interface layer comprises a nitride-based material.