US 12,310,027 B2
Semiconductor device and method of manufacturing the same
Yu-Ting Tsai, Hsinchu (TW); Ching-Tzer Weng, Tainan (TW); Tsung-Hua Yang, Tainan (TW); Kao-Chao Lin, Chiayi County (TW); Chi-Wei Ho, Tainan (TW); and Chia-Ta Hsieh, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Mar. 5, 2024, as Appl. No. 18/595,464.
Application 18/595,464 is a continuation of application No. 17/340,112, filed on Jun. 7, 2021, granted, now 11,950,424.
Prior Publication US 2024/0206184 A1, Jun. 20, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 43/40 (2023.01); H10B 43/30 (2023.01)
CPC H10B 43/40 (2023.02) [H10B 43/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a first gate electrode disposed on the substrate and located in a first region of the semiconductor device;
a first dielectric structure disposed between the first gate electrode and the substrate, wherein the first dielectric structure defines a recess recessed from a lateral surface of the first dielectric structure;
a first sidewall structure covering the first gate electrode, wherein the first sidewall structure comprises a first dielectric layer filling the recess, and the first dielectric layer has a first width between a lateral surface of the first gate electrode and a lateral surface of the first dielectric layer;
a second gate electrode disposed on the substrate and located in a second region of the semiconductor device; and
a second sidewall structure covering the second gate electrode, wherein the second sidewall structure comprises a second dielectric layer abutting the second gate electrode, and the second dielectric layer has a second width between a lateral surface of the second gate electrode and a lateral surface of the second dielectric layer, and wherein the second width is less than the first width.