US 12,310,011 B2
Three-dimensional memory devices and methods for forming the same
Kun Zhang, Wuhan (CN); and Wenxi Zhou, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Jun. 18, 2021, as Appl. No. 17/352,242.
Application 17/352,242 is a continuation of application No. PCT/CN2021/082028, filed on Mar. 22, 2021.
Prior Publication US 2022/0302150 A1, Sep. 22, 2022
Int. Cl. H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01)
CPC H10B 41/27 (2023.02) [H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A three-dimensional (3D) memory device, comprising:
a stack structure comprising interleaved conductive layers and dielectric layers;
a channel structure extending through the stack structure, the channel structure comprising a memory film and a semiconductor channel, wherein the semiconductor channel comprises a doped portion, and a part of the doped portion of the semiconductor channel extends beyond the stack structure in a first direction; and
a doped semiconductor layer comprising a plate and a plug extending from the plate into the channel structure, wherein the doped portion of the semiconductor channel circumscribes the plug of the doped semiconductor layer.