US 12,308,818 B2
Surface acoustic wave device
Cheng-Yao Lai, Taoyuan (TW); Chia-Ta Chang, Taoyuan (TW); Meng-Tse Hsu, Taoyuan (TW); and Ya-Chu Yang, Taoyuan (TW)
Assigned to WIN SEMICONDUCTORS CORP., Taoyuan (TW)
Filed by WIN SEMICONDUCTORS CORP., Taoyuan (TW)
Filed on Jan. 3, 2023, as Appl. No. 18/149,371.
Prior Publication US 2024/0223153 A1, Jul. 4, 2024
Int. Cl. H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/145 (2006.01); H03H 9/25 (2006.01)
CPC H03H 9/02661 (2013.01) [H03H 9/059 (2013.01); H03H 9/14502 (2013.01); H03H 9/14541 (2013.01); H03H 9/25 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A surface acoustic wave device, comprising:
a substrate;
a finger portion of an interdigital transducer (IDT) electrode disposed on the substrate;
a pad portion of the interdigital transducer electrode electrically connected to the finger portion; and
a wiring electrode disposed on the pad portion, wherein the wiring electrode comprises a contact metal layer and an aluminum-based layer, wherein the contact metal layer is disposed between the pad portion and the aluminum-based layer, and the contact metal layer comprises platinum, palladium, or gold, wherein the wiring electrode further comprises a titanium layer disposed on the aluminum-based layer.