US 12,308,738 B2
Power module
Shouyu Hong, Shanghai (CN); Qingdong Chen, Shanghai (CN); Xin Zou, Shanghai (CN); Mingzhun Zhang, Shanghai (CN); Jiaoping Huang, Shanghai (CN); and Jinping Zhou, Shanghai (CN)
Assigned to Delta Electronics (Shanghai) Co., Ltd., Shanghai (CN)
Filed by Delta Electronics (Shanghai) Co., Ltd., Shanghai (CN)
Filed on Nov. 16, 2021, as Appl. No. 17/527,920.
Application 17/527,920 is a continuation in part of application No. 17/015,770, filed on Sep. 9, 2020, granted, now 11,901,114.
Claims priority of application No. 201911310057.0 (CN), filed on Dec. 18, 2019; and application No. 202011496240.7 (CN), filed on Dec. 17, 2020.
Prior Publication US 2022/0077772 A1, Mar. 10, 2022
Int. Cl. H01F 5/00 (2006.01); H01L 25/16 (2023.01); H02M 1/00 (2006.01); H02M 3/00 (2006.01); H02M 3/158 (2006.01)
CPC H02M 3/003 (2021.05) [H01L 25/16 (2013.01); H02M 1/0064 (2021.05); H02M 3/158 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A power module, comprising:
a substrate comprising a first insulation layer, at least one passive component, at least one first through-hole structure, a second insulation layer, a first electrode and a second electrode, wherein the first insulation layer has a top surface and a bottom surface, the at least one passive component is embedded in the first insulation layer, each passive component comprises a first conducting terminal, the at least one first through-hole structure is formed in the first insulation layer and arranged beside a first side of the passive component, the first through-hole structure runs through the first insulation layer, the first through-hole structure comprises a conductive part and an insulation part, the insulation part is disposed within the conductive part, the conductive part of the first through-hole structure is in contact with the first conducting terminal and formed as the first electrode, the second insulation layer is disposed on portion of the conductive part of the first through-hole structure that is close to the bottom surface of the first insulation layer, at least part of the second electrode is disposed on the second insulation layer, and the second electrode is in contact with the bottom surface of the first insulation layer, wherein a projected area of the second electrode and a projected area of the first electrode along a direction perpendicular to the top surface of the first insulation layer are at least partially overlapped with each other, wherein the second electrode and the first electrode are different electrodes; and
at least one power unit disposed on the substrate, wherein the at least one power unit comprises at least one half-bridge circuit, and the half-bridge circuit comprises a first power switch and a second power switch connected in series, wherein a second terminal of the first power switch and a first terminal of the second power switch are connected to a node;
a first carrier plate arranged between the at least one power unit and the substrate, wherein the first electrode is connected with the node through the first carrier plate; and
at least one input capacitor comprising a first terminal and a second terminal, wherein a top surface of the first terminal of the at least one input capacitor is connected with a first terminal of the first power switch, a top surface of the second terminal of the at least one input capacitor is connected with a second terminal of the second power switch, and the at least one input capacitor is disposed between the at least one power unit and the substrate.