US 12,308,615 B2
Non-c-plane group III-nitride-based VCSELs with nanoporous distributed Bragg reflector mirrors
Daniel F. Feezell, Albuquerque, NM (US); Morteza Monavarian, Albuquerque, NM (US); and Saadat M. Mishkat-Ul-Masabih, Albuquerque, NM (US)
Filed by UNM RAINFOREST INNOVATIONS, Albuquerque, NM (US)
Filed on Feb. 25, 2021, as Appl. No. 17/185,868.
Claims priority of provisional application 62/981,300, filed on Feb. 25, 2020.
Prior Publication US 2021/0273412 A1, Sep. 2, 2021
Int. Cl. H01S 5/183 (2006.01); H01S 5/02 (2006.01); H01S 5/024 (2006.01); H01S 5/042 (2006.01); H01S 5/227 (2006.01); H01S 5/32 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/18363 (2013.01) [H01S 5/0206 (2013.01); H01S 5/02469 (2013.01); H01S 5/042 (2013.01); H01S 5/18308 (2013.01); H01S 5/18347 (2013.01); H01S 5/18355 (2013.01); H01S 5/18361 (2013.01); H01S 5/18369 (2013.01); H01S 5/2275 (2013.01); H01S 5/32025 (2019.08); H01S 5/34333 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An electrically injected III-nitride vertical-cavity surface emitting laser (VCSEL) comprising:
a non-c-plane substrate;
an epitaxial nanoporous bottom distributed Bragg reflector (DBR) comprising a plurality of alternating highly doped III-nitride layers and unintentionally doped III-nitride layers formed above the substrate;
an GaN heat spreading layer formed directly on a surface of the epitaxial nanoporous bottom DBR;
an indium tin oxide (ITO) layer formed above the GaN heat spreading layer;
an n+GaN contact layer;
an n−GaN cladding layer;
an active region;
an electron blocking layer;
a p−GaN cladding layer;
an p+GaN contact layer;
a cavity spacer; and
a top DBR,
wherein the GaN heat spreading layer comprises unintentionally doped GaN.